transistor(npn) features z complementary to s9012 z excellent h fe linearity marking: j3 maximum ratings ( t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 40 v v ceo collector-emitter voltage 25 v v ebo emitter-base voltage 5 v i c collector current -continuous 500 ma p c collector power dissipation 300 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 100 a , i e =0 40 v collector-emitter breakdown voltage v (br)ceo i c = 0.1ma , i b =0 25 v emitter-base breakdown voltage v (br)ebo i e =100 a, i c =0 5 v collector cut-off current i cbo v cb =40v, i e =0 0.1 a collector cut-off current i ceo v ce =20v, i b =0 0.1 a emitter cut-off current i ebo v eb = 5v, i c =0 0.1 a h fe(1) v ce =1v, i c = 50ma 120 400 dc current gain h fe(2) v ce =1v, i c =500ma 40 collector-emitter saturation voltage v ce (sat) i c =500ma, i b = 50ma 0.6 v base-emitter saturation voltage v be (sat) i c =500ma, i b = 50ma 1.2 v transition frequency f t v ce =6v, i c = 20ma f= 30mhz 150 mhz classification of h fe(1) rank l h j range 120-200 200-350 300-400 so t -23 1. base 2. emitter 3. collector s901 3 1 date:2011/05 www.htsemi.com semiconductor jinyu
a , a p r , 2 0 1 1 s901 3 2 date:2011/05 www.htsemi.com semiconductor jinyu
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